View 2MBI200U2A-060_1193564.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

SPECIFICATION
Device Name Type Name Spec. No. :
: :
IGBT module 2MBI200U2A-060 MS5F5616
Oct. 30 '03 Oct. 30 '03
S.Ogawa S.Miyashita
Y.Seki
K.Yamada
MS5F 5616
1 13
a
H04-004-07b
Revised
Date Classification Ind. Content
Records
Applied date Issued date Drawn Checked Checked Approved
Oct.-30 -'03
Enactment
Revised VCE(sat), VF value(P4/13), VF carve(P11/ 13) and Warnings(P12/13, 13/ 13)
S.Miyashita K.Yamada
Y.Seki
Jan.-16 -'04
Revision
a
Issued date
S.Ogawa S.Miyashita K.Yamada
T.Hosen
MS5F 5616
2
a
13
H04-004-06b
Type Name : 2MBI200U2A-060
PKG.No. M232
1. Outline Drawing ( Unit : mm )
C2E1
G2 E2
E2
C1
E1 G1
3-M5
DEPTH 9.5min
Tab type terminals (AMP No.110 equivalent)
LABEL
2. Equivalent circuit
MS5F 5616
3 13
a
H04-004-03a
3.Absolute Maximum Ratings ( at Tc= 25 unless otherwise specified
Items Collector-Emitter voltage Gate-Emitter voltage Symbols VCES VGES Ic Icp -Ic -Ic pulse Collector Power Dissipation Junction temperature Storage temperature Isolation voltage between terminal and copper base *1 Pc Tj Tstg Viso Mounting *2 Terminals *2 AC : 1min. 1 device Conditions Maximum Ratings 600 20 200 400 200 400 660 150 -40 +125 2500 3.5 3.5 Units V V
Collector current
Continuous 1mS
A
W VAC Nm
Screw Torque
(*1) All terminals should be connected together when isolation test will be done. (*2) Recommendable Value : Mounting 2.5~3.5 Nm (M5) Terminals 2.5~3.5 Nm (M5)
4. Electrical characteristics ( at Tj= 25 unless otherwise specified)
Items
Zero gate voltage Collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Turn-on time
Symbols
ICES IGES VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr (i) toff tf VF (terminal) VF (chip) R lead
Conditions
VGE = 0V VCE = 600V VCE = 0V VGE=20V VCE = 20V Ic = 200mA VGE=15V Ic = 200A Tj= 25 Tj=125 Tj= 25 Tj=125
Characteristics min. typ. max.
6.2 6.7 2.15 2.4 1.85 2.1 14.0 0.40 0.22 0.16 0.48 0.07
a a a a a
Units
mA nA V
1.0 200 7.7 2.45 1.20 0.60 1.20 0.45
a
V
VCE=10V,VGE=0V,f=1MHz Vcc = 300V Ic = 200A VGE=15V Rg = 16 Tj= 25 Tj=125 Tj= 25 Tj=125
nF
s
Turn-off time
VGE=0V IF = 200A IF = 200A
Forward on voltage
1.90 1.95
2.30 -
Reverse recovery time Lead resistance, terminal-chip *
(*)
1.60 a 1.65 1.39
0.35 -
V
s m
Biggest internal terminal resistance among arm.
MS5F 5616
4
a
13
H04-004-03a
5. Thermal resistance characteristics Items
Thermal resistance(1device) Contact Thermal resistance
Symbols
Rth(j-c) Rth(c-f)
Conditions
IGBT FWD with Thermal Compound ()
min.
-
Characteristics typ. max.
0.05 0.19 0.32 -
Units
/W
This is the value which is defined mounting on the additional cooling fin with thermal compound.
6. Indication on module Logo of production
2MBI200U2A-060
200A 600V
Lot.No. 7.Applicable category
Place of manufacturing (code)
This specification is applied to IGBT Module named 2MBI200U2A-060 .
8.Storage and transportation notes
The module should be stored at a standard temperature of 5 to 35 and humidity of 45 to 75% . Store modules in a place with few temperature changes in order to avoid condensation on the module surface. Avoid exposure to corrosive gases and dust. Avoid excessive external force on the module. Store modules with unprocessed terminals. Do not drop or otherwise shock the modules when transporting.
9. Definitions of switching time

90%
0V VGE
L
0V trr Irr
90%

VCE
Vcc
Ic
90%
RG VGE
VCE Ic
0V 0A
tr(i) tr ton toff

Ic
10%
10%
VCE tf
10%
10. Packing and Labeling Display on the packing box - Logo of production - Type name - Lot No - Products quantity in a packing box
MS5F 5616
5
a
13
H04-004-03a
11. Reliability test results
Reliability Test Items
Test categories Test items 1 Terminal Strength (Pull test) 2 Mounting Strength Pull force Test time Screw torque Test time Test methods and conditions : : : : 20N 101 sec. 2.5 ~ 3.5 Nm (M5) 101 sec. Reference Number Acceptnorms of ance EIAJ ED-4701 sample number 5 5 (0:1) (0:1)
(Aug.-2001 edition)
Test Method 401 Method Test Method 402 m ethod Test Method 403 Reference 1 Condition code B
Mechanical Tests
3 Vibration
4 Shock
1 High Temperature Storage 2 Low Temperature Storage 3 Temperature Humidity Storage 4 Unsaturated Pressure Cooker
Environment Tests
Range of frequency : 10 ~ 500Hz Sweeping time : 15 min. Acceleration : 100m/s 2 Sweeping direction : Each X,Y,Z axis Test time : 6 hr. (2hr./direction) Maximum acceleration : 5000m/s 2 Pulse width : 1.0msec. Direction : Each X,Y,Z axis Test time : 3 times/direction Storage temp. : 1255 Test duration : 1000hr. Storage temp. : -405 Test duration : 1000hr. Storage temp. : 852 Relative humidity : 855% Test duration : 1000hr. Test temp. : 1202 Atmospheric pressure : 1.7 x 10 5 Pa Test humidity : 855% Test duration : 96hr. Test temp. : Low temp. -405 High temp. 125 5 RT 5 ~ 35 : High ~ RT ~ Low ~ RT 1hr. 0.5hr. 1hr. 0.5hr. : 100 cycles : High temp. 100
+0 -5
5
(0:1)
Test Method 404 Condition code B
5
(0:1)
Test Method 201 Test Method 202 Test Method 103 Test code C Test Method 103 Test code E
5 5 5
(0:1) (0:1) (0:1)
5
(0:1)
5 Temperature Cycle
Test Method 105
5
(0:1)
Dwell time Number of cycles 6 Thermal Shock Test temp.
Test Method 307 m ethod Condition code A
5
(0:1)
Low temp. 0 Used liquid : W ater with ice and boiling water Dipping time : 5 min. par each temp. Transfer time : 10 sec. Number of cycles : 10 cycles
+5 -0
MS5F 5616
6 13
a
H04-004-03a
Reliability Test Items
Test categories Test items 1 High temperature Reverse Bias Test methods and conditions Reference Number Acceptnorms of ance EIAJ ED-4701 sample number 5 (0:1)
(Aug.-2001 edition)
Test Method 101
Test temp. Bias Voltage Bias Method
Endurance Tests Tests Endurance
Test duration 2 High temperature Bias (for gate) Test temp. Bias Voltage Bias Method Test duration 3 Temperature Humidity Bias Test temp. Relative humidity Bias Voltage Bias Method Test duration ON time OFF time Test temp. Number of cycles
: Ta = 1255 (Tj 150 ) : VC = 0.8xVCES : Applied DC voltage to C-E VGE = 0V : 1000hr.
Test Method 101
5
(0:1)
: Ta = 1255 (Tj 150 ) : VC = VGE = +20V or -20V : Applied DC voltage to G-E VCE = 0V : 1000hr. : : : : : : : : : 852 oC 855% VC = 0.8xVCES Applied DC voltage to C-E VGE = 0V 1000hr. 2 sec. 18 sec. Tj=1005 deg Tj 150 , Ta=255 15000 cycles
Test Method 102 Condition code C
5
(0:1)
4 Intermitted Operating Life (Power cycle) ( for IGBT )
Test Method 106
5
(0:1)
Failure Criteria
Item Characteristic Symbol Failure criteria Unit Lower limit Upper limit LSLx0.8 USLx2 USLx2 USLx1.2 USLx1.2 USLx1.2 USLx1.2 USLx1.2 mA A mA V V mV mV Note
Electrical Leakage current ICES characteristic IGES Gate threshold voltage VGE(th) Saturation voltage VCE(sat) Forward voltage VF Thermal IGBT VGE resistance or VCE FWD VF Isolation voltage Viso Visual Visual inspection inspection Peeling Plating and the others
Broken insulation The visual sample
LSL : Lower specified limit. USL : Upper specified limit. Note : Each parameter measurement read-outs shall be made after stabilizing the components at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests. And in case of the wetting tests, for example, moisture resistance tests, each component shall be made wipe or dry completely before the measurement.
MS5F 5616
7 13
a
H04-004-03a
Reliability Test Results
Test categorie s Number Reference Number of norms of test failure EIAJ ED-4701 sample (Aug.-2001 edition) sample
Test Method 401 Method Test Method 402 method Test Method 403 Condition code B Test Method 404 Condition code B Test Method 201 Test Method 202 Test Method 103 Test code C Test Method 103 Test code E Test Method 105 Test Method 307 method Condition code A
Test items
Mechanical Tests
1 Terminal Strength (Pull test) 2 Mounting Strength 3 Vibration 4 Shock 1 High Temperature Storage 2 Low Temperature Storage
5 5 5 5 5 5 5 5 5 5
0 0 0 0 0 0 0 0 0 0
Environment Tests
3 Temperature Humidity Storage 4 Unsaturated Pressure Cooker 5 Temperature Cycle 6 Thermal Shock
1 High temperature Reverse Bias Test Method 101
5 5 5 5
0 0 0 0
Endurance Tests
2 High temperature Bias ( for gate ) 3 Temperature Humidity Bias 4 Intermitted Operating Life (Power cycling) ( for IGBT )
Test Method 101 Test Method 102 Condition code C Test Method 106
MS5F 5616
8
a
13
H04-004-03a
Collector current vs. Collector-Emitter voltage (typ.) Tj= 25 / chip
500 VGE=20V 15V 12V Collector current : Ic [A]
Collector current vs. Collector-Emitter voltage (typ.) Tj= 125 / chip
500 VGE=20V 15V 12V
400 Collector current : Ic [A]
400
300
10V
300
10V
200
200
100 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V]
100
8V
0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V]
Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip
500 Collector - Emitter voltage : VCE [ V ]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25C / chip
10
400 Collector current : Ic [A] Tj=25 300 Tj=125
8
6
200
4 Ic=400A Ic=200A Ic=100A 5 10 15 20 25
100
2
0 0 1 2 3 4
0
Collector-Emitter voltage : VCE [V]
Gate - Emitter voltage : VGE [ V ]
Capacitance vs. Collector-Emitter voltage (typ.)
100.0 Collector-Emitter voltage : VCE [ 100V/div ] Gate - Emitter voltage : VGE [ 5V/div ] Capacitance : Cies Coes Cres [ nF ]
Dynamic Gate charge (typ.) Vcc=300V Ic=200ATj= 25
Cies 10.0
VGE
Cres 1.0 Coes
VCE 0 200 400 600 800
0.1 0 10 20 30
Collector-Emitter voltage : VCE [V]
Gate charge : Qg [ nC ]
MS5F 5616
9 13
a
H04-004-03a
Switching time vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg=16, Tj= 25
10000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 10000
Switching time vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg=16, Tj=125
1000
toff
1000
ton toff tr
ton 100
tr tf
100
tf
10 0 100 200 300 400 Collector current : Ic [ A ]
10 0 100 200 300 400 Collector current : Ic [ A ]
Switching time vs. Gate resistance (typ.) Vcc=300V, Ic=200A, VGE=15V, Tj= 25
10000 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] 20
Switching loss vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg=16
15
Eoff(125) Eon(125) Eoff(25)
1000 toff ton 100 tr tf
10
Eon(25)
5 Err(125) 0 Err(25) 0 100 200 300 400
10 1.0 10.0 Gate resistance : Rg [ ] 100.0
Collector current : Ic [ A ]
Switching loss vs. Gate resistance (typ.) Vcc=300V, Ic=200A, VGE=15V, Tj= 125
30 Switching loss : Eon, Eoff, Err [ mJ/pulse ] 25 20 15 10 5 0 1.0 10.0 Gate resistance : Rg [ ] Err 100.0 Eon Collector current : Ic [ A ] 500
Reverse bias safe operating area (max.) +VGE=15V,-VGE15V, RG16 ,Tj125
400
300
Eoff
200
100
0 0 200 400 600 800 Collector - Emitter voltage : VCE [ V ]
MS5F 5616
10 13
a
H04-004-03a
a
Forward current vs. Forward on voltage (typ.) chip
1000 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ]
Reverse recovery characteristics (typ.) Vcc=300V, VGE=15V, Rg=16
500
Forward current : IF [ A ]
400 Tj=25 300 Tj=125
100
200
Irr (125) Irr (25) trr (125) trr (25)
100
0 0 1 2 3 Forward on voltage : VF [ V ]
10 0 100 200 300 400 Forward current : IF [ A ]
Transient thermal resistance (max.)
1.000 Thermal resistanse : Rth(j-c) [/W ] FWD IGBT
0.100
0.010
0.001 0.001
0.010
0.100
1.000
Pulse width : Pw [ sec ]
MS5F 5616
11
a
13
H04-004-03a
a
Warnings
This product shall be used within its absolute maximum rating (voltage, current, and temperature).This product may be broken in case of using beyond the ratings. Connect adequate fuse or protector of circuit between three-phase line and this product to prevent the equipment from causing secondary destruction, such as fire, its spreading, or explosion. Use this product after realizing enough working on environment and considering of product's reliability life. This product may be broken before target life of the system in case of using beyond the product's reliability life. When electric power is connected to equipments, rush current will be flown through rectifying diode to charge 2 DC capacitor. Guaranteed value of the rush current is specified as I t (non-repetitive), however frequent rush current through the diode might make it's power cycle destruction occur because of the repetitive power. In application which has such frequent rush current, well consideration to product life time (i.e. suppressing the rush current) is necessary. 2 2 I t()I t If the product had been used in the environment with acid, organic matter, and corrosive gas ( hydrogen sulfide, sulfurous acid gas), the product's performance and appearance can not be ensured easily. Use this product within the power cycle curve (Technical Rep.No. : MT5F12959). Power cycle capability is classified to delta-Tj mode which is stated as above and delta-Tc mode. Delta-Tc mode is due to rise and down of case temperature (Tc), and depends on cooling design of equipment which use this product. In application which has such frequent rise and down of Tc, well consideration of product life time is necessary. (No.: MT5F12959)Tj Tc(Tc) Never add mechanical stress to deform the main or control terminal. The deformed terminal may cause poor contact problem. Use this product with keeping the cooling fin's flatness between screw holes within 100um at 100mm and the roughness within 10um. Also keep the tightening torque within the limits of this specification. Too large convex of cooling fin may cause isolation breakdown and this may lead to a critical accident. On the other hand, too large concave of cooling fin makes gap between this product and the fin bigger, then, thermal conductivity will be worse and over heat destruction may occur. 100mm100um10um In case of mounting this product on cooling fin, use thermal compound to secure thermal conductivity. If the thermal compound amount was not enough or its applying method was not suitable, its spreading will not be enough, then, thermal conductivity will be worse and thermal run away destruction may occur. Confirm spreading state of the thermal compound when its applying to this product. (Spreading state of the thermal compound can be confirmed by removing this product after mounting.) () It shall be confirmed that IGBT's operating locus of the turn-off voltage and current are within the RBSOA specification. This product may be broken if the locus is out of the RBSOA. RBSOARBSOA
MS5F 5616
12 13
a
H04-004-03a
- If excessive static electricity is applied to the control terminals, the devices may be broken. Implement some countermeasures against static electricity. - Never add the excessive mechanical stress to the main or control terminals when the product is applied to equipments. The module structure may be broken. - In case of insufficient -VGE, erroneous turn-on of IGBT may occur. -VGE shall be set enough value to prevent this malfunction. (Recommended value : -VGE = -15V) -VGE-VGE : -VGE = -15V)
a
- In case of higher turn-on dv/dt of IGBT, erroneous turn-on of opposite arm IGBT may occur. Use this product in the most suitable drive conditions, such as +VGE, -VGE, RG to prevent the malfunction. dv/dt +VGE, -VGE, RG - This product may be broken by avalanche in case of VCE beyond maximum rating VCES is applied between C-E terminals. Use this product within its absolute maximum voltage. VCESVCE
a
Cautions
Fuji Electric Device Technology is constantly making every endeavor to improve the product quality and reliability. However, semiconductor products may rarely happen to fail or malfunction. To prevent accidents causing injury or death, damage to property like by fire, and other social damage resulted from a failure or malfunction of the Fuji Electric Device Technology semiconductor products, take some measures to keep safety such as redundant design, spread-fire-preventive design, and malfunction-protective design. The application examples described in this specification only explain typical ones that used the Fuji Electric Device Technology products. This specification never ensure to enforce the industrial property and other rights, nor license the enforcement rights. The product described in this specification is not designed nor made for being applied to the equipment or systems used under life-threatening situations. When you consider applying the product of this specification to particular used, such as vehicle-mounted units, shipboard equipment, aerospace equipment, medical devices, atomic control systems and submarine relaying equipment or systems,please apply after confirmation of this product to be satisfied about system construction and required reliability.
-
-
If there is any unclear matter in this specification, please contact Fuji Electric Device Technology Co.,Ltd.
MS5F 5616
13 13
a
H04-004-03a

▲Up To Search▲

Price & Availability of 2MBI200U2A-060

	To Download 2MBI200U2A-060 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .